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Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism

Han, X. D. and Zhang, Y. F. and Zheng, K. and Zhang, X. N. and Zhang, Z. and Hao, Y. J. and Guo, X. Y. and Yuan, J. and Wang, Z. L. (2007) Low-temperature in situ large strain plasticity of ceramic SiC nanowires and its atomic-scale mechanism. NANO LETTERS, 7 (2). pp. 452-457.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl0627689

Abstract

Large strain plasticity is phenomenologically defined as the ability of a material to exhibit an exceptionally large deformation rate during mechanical deformation. It is a property that is well established for metals and alloys but is rarely observed for ceramic materials especially at low temperature (~300 K). With the reduction in dimensionality, however, unusual mechanical properties are shown by ceramic nanomaterials. In this Letter, we demonstrated unusually large strain plasticity of ceramic SiC nanowires (NWs) at temperatures close to room temperature that was directly observed in situ by a novel high-resolution transmission electron microscopy technique. The continuous plasticity of the SiC NWs is accompanied by a process of increased dislocation density at an early stage, followed by an obvious lattice distortion, and finally reaches an entire structure amorphization at the most strained region of the NW. These unusual phenomena for the SiC NWs are fundamentally important for understanding the nanoscale fracture and strain-induced band structure variation for high-temperature semiconductors. Our result may also provide useful information for further studying of nanoscale elastic−plastic and brittle−ductile transitions of ceramic materials with superplasticity.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Soft materials
Material Science > Nanostructured materials
ID Code:2279
Deposited By:Anuj Seth
Deposited On:28 May 2009 13:39
Last Modified:28 May 2009 13:39

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