Deb, Parijat and Kim, Hogyoung and Qin, Yexian and Lahiji, Roya and Oliver, Mark and Reifenberger, Ronald and Sands, Timothy (2006) GaN nanorod Schottky and p-n junction diodes. NANO LETTERS, 6 (12). pp. 2893-2898.
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Official URL: http://dx.doi.org/10.1021/nl062152j
Abstract
Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Tunnelling and microscopic phenomena Physical Science > Nanophysics Material Science > Nanostructured materials |
| ID Code: | 2266 |
| Deposited By: | Anuj Seth |
| Deposited On: | 06 Jan 2009 12:32 |
| Last Modified: | 19 Jan 2009 15:54 |
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