Nano Archive

GaN nanorod Schottky and p-n junction diodes

Deb, Parijat and Kim, Hogyoung and Qin, Yexian and Lahiji, Roya and Oliver, Mark and Reifenberger, Ronald and Sands, Timothy (2006) GaN nanorod Schottky and p-n junction diodes. NANO LETTERS, 6 (12). pp. 2893-2898.

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Official URL: http://dx.doi.org/10.1021/nl062152j

Abstract

Conductive atomic force microscopy has been used to characterize single GaN nanorod Schottky and p-n junction diodes. The ideality factor, reverse breakdown voltage, and the Schottky barrier height of individual nanorod diodes were compared to those from conventional thin-film diodes. Large-area contacts, enabling diodes with arrays of GaN nanorods in parallel, were also fabricated and their electrical characteristics investigated. The defect-free nature of the GaN nanorods and enhanced tunneling effects due to nanoscale contacts have been invoked to explain the electrical behavior of the nanorod diodes.

Item Type:Article
Subjects:Material Science > Tunnelling and microscopic phenomena
Physical Science > Nanophysics
Material Science > Nanostructured materials
ID Code:2266
Deposited By:Anuj Seth
Deposited On:06 Jan 2009 12:32
Last Modified:19 Jan 2009 15:54

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