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Optical and electrical properties of ZnO nanowires grown on aluminium foil by non-catalytic thermal evaporation

Umar, Ahmad and Kim, Byoung-Kye and Kim, Ju-Jin and Hahn, Y. B. (2007) Optical and electrical properties of ZnO nanowires grown on aluminium foil by non-catalytic thermal evaporation. NANOTECHNOLOGY, 18 (17). p. 175606.

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/17/175...

Abstract

Well-crystallized ZnO nanowires were grown in large quantity on aluminium foil, by a non-catalytic thermal evaporation method using metallic zinc powder in the presence of oxygen at low temperature. Detailed structural and optical characterizations confirmed that the as-grown nanowires were highly crystalline, possessed a wurtzite hexagonal phase, had grown along the c-axis direction and exhibited excellent optical properties. The electrical characteristics of an individual nanowire were observed in air and vacuum by fabricating field-effect transistor (FET) devices. The transistors turned on typically between −5 and 0 V in ambient air. However, a large threshold voltage (Vth) shift, ~5 V, towards negative gate bias was observed in high vacuum. The shift of Vth is believed to be related to the charge transfer from the ZnO nanowire surface to the physically adsorbed OH or oxygen. Moreover, the fabricated FETs show a high conductivity ON/OFF ratio of about ~102 with ultraviolet (UV) light and hence provide an effective way to use these devices in nanoscale UV detectors and optoelectronic switches.

Item Type:Article
Subjects:Physical Science > Nanophysics
Analytical Science > Nanotechnology for sensing and actuating
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
ID Code:2247
Deposited By:Anuj Seth
Deposited On:27 May 2009 14:37
Last Modified:27 May 2009 14:37

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