Jiang, Xiaocheng and Xiong, Qihua and Nam, Sungwoo and Qian, Fang and Li, Yat and Lieber, Charles M. (2007) InAs/InP radial nanowire heterostructures as high electron mobility devices. NANO LETTERS, 7 (10). pp. 3214-3218.
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Official URL: http://dx.doi.org/10.1021/nl072024a
Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAsAnP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/mu m, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
|Subjects:||Physical Science > Nano objects|
Physical Science > Nanoelectronics
Material Science > Nanostructured materials
Physical Science > Photonics
|Deposited By:||Anuj Seth|
|Deposited On:||06 Jan 2009 15:03|
|Last Modified:||20 Jan 2009 10:52|
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