Xiang, Bin and Wang, Pengwei and Zhang, Xingzheng and Dayeh, Shadi A. and Aplin, David P. R. and Soci, Cesare and Yu, Dapeng and Wang, Deli (2007) Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition. NANO LETTERS, 7 (2). pp. 323-328.
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Official URL: http://dx.doi.org/10.1021/nl062410c
We report, for the first time, the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the < 001 > direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low-temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and annealed phosphorus-doped ZnO NWs show clear differences related to the presence of intragap donor and acceptor states. The electrical transport measurements of phosphorus-doped NW FETs indicate a transition from n-type to p-type conduction upon annealing at high temperature, in good agreement with the PL results. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, optoelectronics, and medicines.
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nanoelectronics
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Deposited By:||Anuj Seth|
|Deposited On:||06 Jan 2009 17:13|
|Last Modified:||19 Feb 2009 17:08|
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