Nano Archive

NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices

Caruge, Jean-Michel and Halpert, Jonathan E. and Bulovic, Vladimir and Bawendi, Moungi G. (2006) NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices. NANO LETTERS, 6 (12). pp. 2991-2994. ISSN Print Edition ISSN: 1530-6984; Web Edition ISSN: 1530-6992

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl0623208

Abstract

We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq(3)), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.

Item Type:Article
Subjects:Physical Science > Quantum phenomena
ID Code:2193
Deposited By:M T V
Deposited On:22 Dec 2008 15:24
Last Modified:22 Dec 2008 15:24

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