Nano Archive

Model and parameters for regular contacts grid in nanoscale semiconductors

Khvat'kov, V. M. and Alievskiy, A. A. and Pyatkov, E. V. and Ovechkina, R. M. and Kadushnikov, V. V. (2007) Model and parameters for regular contacts grid in nanoscale semiconductors. Nanotechnologies in Russia, Volume 2 (7-8). pp. 121-127.

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Official URL: http://elibrary.ru/full_text.asp?id=9510872

Abstract

The article covers the issue of measuring parameters for the regular grid of nanoscale semiconductor contacts using SEM images of contacts array. Novel methods for determining different grid characteristics were proposed. Two grid models were reviewed – first one supposing only the presence of parallel rows of contacts, with contacts located within a row in almost regular manner. Second model examines more complex structural relations among the contact rows. Algorithms for determining parameters of an ideal grid and calculating various structure parameters were developed and verifies using real examples.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanostructured materials
ID Code:2145
Deposited By:Prof. Alexey Ivanov
Deposited On:19 Dec 2008 13:14
Last Modified:12 Feb 2009 12:33

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