Khvat'kov, V. M. and Alievskiy, A. A. and Pyatkov, E. V. and Ovechkina, R. M. and Kadushnikov, V. V. (2007) Model and parameters for regular contacts grid in nanoscale semiconductors. Nanotechnologies in Russia, Volume 2 (7-8). pp. 121-127.
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Official URL: http://elibrary.ru/full_text.asp?id=9510872
The article covers the issue of measuring parameters for the regular grid of nanoscale semiconductor contacts using SEM images of contacts array. Novel methods for determining different grid characteristics were proposed. Two grid models were reviewed first one supposing only the presence of parallel rows of contacts, with contacts located within a row in almost regular manner. Second model examines more complex structural relations among the contact rows. Algorithms for determining parameters of an ideal grid and calculating various structure parameters were developed and verifies using real examples.
|Subjects:||Physical Science > Nanophysics|
Material Science > Nanostructured materials
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:14|
|Last Modified:||12 Feb 2009 12:33|
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