Kortov, V. S. and Zvonarev, S. V. (2008) Specific features of high-field electron emission from nanostructured silicon dioxide. Nanotechnologies in Russia, Volume 3 (1-2). pp. 101-105.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.springerlink.com/content/k18wg7051628jj...
A physical model of electron emission from charged dielectric films and near-surface layers of single-crystal dielectrics is modified to take into account properties of nanostructured materials. The model allows for electron scattering by grain boundaries and increase in the energy depth of surface carrier traps. Emission from nanostructured and single-crystal silicon dioxides is simulated. It is shown that nanostructured SiO2 is characterized by a lower emissivity, a wider emitted-electron energy spectrum, and a higher dielectric strength, as compared to single crystals.
|Subjects:||Physical Science > Nanophysics|
Material Science > Nanochemistry
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:14|
|Last Modified:||16 Feb 2009 21:20|
Repository Staff Only: item control page