Latyshev, A. V. (2008) Diagnostics and lithography of semiconductor structures for nanoelectronics. Nanotechnologies in Russia, Volume 3 (5-6). pp. 272-290.
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Official URL: http://www.springerlink.com/content/3501j2x0369622...
A complex of metrological, diagnostic, and technological support of investigations and innovations in the field of nanotechnologies based on the Nanostructures joint service center is presented. Results of the study of the atomic structure of the surface, interfaces, and structural defects in semiconductor materials; the development of modern electron and scanning probe microscopy methods; and the fabrication of low-dimensional solid-state systems for nanoelectronics are reviewed. The emphasis is on the development of physicochemical fundamentals of the nanostructuring of semiconductor materials, analysis of the main features of growth and defect formation in low-dimensional systems, and the fabrication of experimental elements of nanoelectronics for studying quantum, electron interference, and single-electron effects. The results provide the basis of nanotechnologies for controlled synthesis of nanostructures with tailored configurations and the required electrical, mechanical, and other properties.
|Subjects:||Material Science > Nanofabrication processes and tools|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:15|
|Last Modified:||25 Jan 2009 01:23|
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