Nano Archive

Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Larsson, Magnus W. and Wagner, Jakob B. and Wallin, Mathias and Hakansson, Paul and Froberg, Linus E. and Samuelson, Lars and Wallenberg, L. Reine (2007) Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires. Nanotechnology, 18 (1). 015504 (8pp).

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The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20~nm show a 10~nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

Item Type:Article
Subjects:Analytical Science > Nanotechnology for sensing and actuating
ID Code:207
Deposited By:Lesley Tobin
Deposited On:18 Nov 2008 14:47
Last Modified:02 Mar 2009 10:57

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