Larsson, Magnus W. and Wagner, Jakob B. and Wallin, Mathias and Hakansson, Paul and Froberg, Linus E. and Samuelson, Lars and Wallenberg, L. Reine (2007) Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires. Nanotechnology, 18 (1). 015504 (8pp).
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Official URL: http://stacks.iop.org/0957-4484/18/015504
The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20~nm show a 10~nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
|Subjects:||Analytical Science > Nanotechnology for sensing and actuating|
|Deposited By:||Lesley Tobin|
|Deposited On:||18 Nov 2008 14:47|
|Last Modified:||02 Mar 2009 10:57|
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