Krasnikov, G. Ya. and Orlov, O. M. (2008) Distinctive features and problems of CMOS technology for decrease in the node size to 0.18 ?m or less. Nanotechnologies in Russia, Volume 3 (7-8). pp. 502-506.
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Official URL: http://www.springerlink.com/content/w81505874jk47w...
Abstract
The main problems and distinctive features in developing CMOS VLSI technology are considered for a decrease in the node size to 0.18 ?m or less. This becomes possible on the basis of a complex solution of a number of research and technical problems including special equipment and technological processes and advanced design engineering solutions for semiconductor structural formation.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanofabrication processes and tools Engineering > Nanotechnology applications in mechanical engineering |
| ID Code: | 2067 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 19 Dec 2008 13:11 |
| Last Modified: | 01 Feb 2009 19:23 |
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