S.A., Dolbik A.V.Kovalevskii (2006) The Peculiarities of Germanium Interaction with Polycrystalline Silicon Films. Journal of NANO and MICROSYSTEM TECHNIQUE, 4 (4). pp. 29-33.
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The germanium interaction with polycrystalline silicon films produced in low pressure chemical vapor deposition was investigated. It were obtained the submicrostructure parameters (the Bragg scattering region site D and microstresses ?) time and doping dependences after diffusivity Ge for polycrystalline silicon films. The kinetics of defect structure was examined. It was shown that polycrystalline silicon films diffusivity Ge leads to the increase crystalline perfection level, subgrain boundary migration and turn of grains.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:21|
|Last Modified:||20 Mar 2009 08:58|
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