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Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density

Bernardi, A and Osso, J. O. and Alonso, M. I. and Goni, A. R. and Garriga, M (2006) Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density. Nanotechnology, 17 (10). pp. 2602-2608. ISSN 09574484

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Official URL: http://dx.doi.org/10.1088/0957-4484/17/10/026

Abstract

We have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited on a Ge wetting layer (WL) prior to the growth of the dots. Using atomic-force microscopy combined with optical techniques like Raman and ellipsometry, we performed a systematic study of the role played by thermally activated Si interdiffusion on dot density, composition and morphology, by changing only the growth temperature TWL of the WL. Strikingly, we observe that higher dot densities and a narrower size distribution are achieved by increasing the deposition temperature TWL, i.e. by enhancing Si interdiffusion from the substrate. We suggest a two-stage growth procedure for fine tuning of dot topography (density, shape and size) useful for possible optoelectronic applications.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Quantum phenomena
Material Science > Nanostructured materials
ID Code:203
Deposited By:Lesley Tobin
Deposited On:17 Nov 2008 16:24
Last Modified:12 Feb 2009 12:37

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