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Influence of Low- and Infralow Frequency Electric Fields on Behavior of Domain Structure of PZT Films under Different Magnitudes of Mechanical Stress in the Material.

Burkhanov, Ê. À. and Laletin , À. I. and Sigov, R. À. and Vorotilov, À. S. (2006) Influence of Low- and Infralow Frequency Electric Fields on Behavior of Domain Structure of PZT Films under Different Magnitudes of Mechanical Stress in the Material. Journal of NANO and MICROSYSTEM TECHNIQUE, 5 (5). pp. 26-28.

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Abstract

Results of a study of influence of mechanical stress magnitudes on dielectric properties of PZT ferroelectric thin film are presented. An external load (G) giving rise to a growing of residual stress (? ) along one of the film axises was applied to the sample. It was determined that under low and moderate electric fields the stress growing promotes increase of dielectric permittivity (?’) of the sample. The further increase of measuring field strength leaded to the inverse effect — decrease of ?’ with rising of G. A tendency to widening of a half width of polarization loops (the dielectric losses) under applying of the higher mechanical loads was observed.The experimental data are explained in a frame of interaction of internal stresses with a domain structure of the film.

Item Type:Article
ID Code:2026
Deposited By:Prof. Alexey Ivanov
Deposited On:19 Dec 2008 13:21
Last Modified:20 Mar 2009 08:58

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