Nano Archive

Research of Process Anisotropic Plasmachemical of Etching Film Dioxid of Silcon.

V., Dolbik A.V.Kovaltvskii A.A. Tzybulskii V. (2006) Research of Process Anisotropic Plasmachemical of Etching Film Dioxid of Silcon. Journal of NANO and MICROSYSTEM TECHNIQUE, 6 (6). pp. 25-31.

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Official URL: http://www.microsystems.ru/

Abstract

The process dry anisotropic of etching dioxide of silicon with consist of for and oxygen to environment is investigated.

Item Type:Article
ID Code:2021
Deposited By:Prof. Alexey Ivanov
Deposited On:19 Dec 2008 13:21
Last Modified:20 Mar 2009 08:58

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