V., Dolbik A.V.Kovaltvskii A.A. Tzybulskii V. (2006) Research of Process Anisotropic Plasmachemical of Etching Film Dioxid of Silcon. Journal of NANO and MICROSYSTEM TECHNIQUE, 6 (6). pp. 25-31.
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Official URL: http://www.microsystems.ru/
Abstract
The process dry anisotropic of etching dioxide of silicon with consist of for and oxygen to environment is investigated.
| Item Type: | Article |
|---|---|
| ID Code: | 2021 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 19 Dec 2008 13:21 |
| Last Modified: | 20 Mar 2009 08:58 |
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