I.A., Gurin N.T.Kashtankin (2006) Temperature Characteristics of Bipolar Silicon N-shaped Devices with Guided I-V Characteristics. Journal of NANO and MICROSYSTEM TECHNIQUE, 6 (6). pp. 41-43.
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Official URL: http://www.microsystems.ru/
Abstract
The temperature models of bipolar silicon N-shaped devices with guided I-V characteristics were developed. The temperature changes cause the increasing of the max current in the output I-V characteristics. The results of modeling correspond to experimental data.
| Item Type: | Article |
|---|---|
| ID Code: | 2018 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 19 Dec 2008 13:21 |
| Last Modified: | 20 Mar 2009 08:58 |
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