I.A., Gurin N.T.Kashtankin (2006) Temperature Characteristics of Bipolar Silicon N-shaped Devices with Guided I-V Characteristics. Journal of NANO and MICROSYSTEM TECHNIQUE, 6 (6). pp. 41-43.
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The temperature models of bipolar silicon N-shaped devices with guided I-V characteristics were developed. The temperature changes cause the increasing of the max current in the output I-V characteristics. The results of modeling correspond to experimental data.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:21|
|Last Modified:||20 Mar 2009 08:58|
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