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Chemical-Mechanical Polishing as a Method of Activation and Restoration of a Surface of Silicon Plates in Technology of Creation Structures ¬ęSilicon on&nb

V, Butyvskaya M. (2006) Chemical-Mechanical Polishing as a Method of Activation and Restoration of a Surface of Silicon Plates in Technology of Creation Structures ¬ęSilicon on&nb. Journal of NANO and MICROSYSTEM TECHNIQUE, 7 (7). pp. 40-42.

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Official URL: http://www.microsystems.ru/

Abstract

Results of research of process of chemical-mechanical polishing (CMP) are presented to technologies of creation of structures ¬ęsilicon on insulator¬Ľ (SOI), to the received by means of ultrasonic and atomic-power microscopy. These researches are directed on optimization of technological processor manufacturing of structures SOI, that, hence, conducts to depreciation of structures.

Item Type:Article
ID Code:2016
Deposited By:Prof. Alexey Ivanov
Deposited On:19 Dec 2008 13:21
Last Modified:20 Mar 2009 08:58

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