I.A., Gurin N.T.Kashtankin (2006) N-transistor Optrons. Journal of NANO and MICROSYSTEM TECHNIQUE, 8 (8). pp. 37-39.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.microsystems.ru/
Abstract
The models of bipolar silicon N-shaped optrons were developed. The spectral, transmission characteristics and their temperature dependence are analyzed. The Features of silicon N-transistor optrons with shunting of the base-emitter junction and with modulation of the base current are discussed. The results of modeling correspond to experimental data.
| Item Type: | Article |
|---|---|
| ID Code: | 2008 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 19 Dec 2008 13:21 |
| Last Modified: | 20 Mar 2009 08:58 |
Repository Staff Only: item control page
