I.A., Gurin N.T.Kashtankin (2006) N-transistor Optrons. Journal of NANO and MICROSYSTEM TECHNIQUE, 8 (8). pp. 37-39.
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The models of bipolar silicon N-shaped optrons were developed. The spectral, transmission characteristics and their temperature dependence are analyzed. The Features of silicon N-transistor optrons with shunting of the base-emitter junction and with modulation of the base current are discussed. The results of modeling correspond to experimental data.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:21|
|Last Modified:||20 Mar 2009 08:58|
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