V., Butyvskaya M. (2006) Radial ion-Induced Gas Cleavage of Silicon in the SOI Manufacturing Techniques. Journal of NANO and MICROSYSTEM TECHNIQUE, 10 (10). pp. 14-17.
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The article shows the results of a feasibility study of increasing the efficiency of radiation-induced gas cleavage of silicon wafers in the SOI manufacturing techniques by superimposing the radiation damage energy profiles on the dopant distribution profiles in case of silicon irradiation by solely hydrogen ions.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:20|
|Last Modified:||20 Mar 2009 08:58|
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