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Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP(001) quantum dots

Dion, C and Desjardins, P and Chicoine, M and Schiettekatte, F and Poole, PJ and Raymond, S (2007) Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP(001) quantum dots. Nanotechnology, 18 (1). 015404-015408. ISSN 09574484

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Official URL: http://dx.doi.org/10.1088/0957-4484/18/1/015404

Abstract

This work examines the influence of post-growth phosphorus implantation followed by rapid thermal annealing on the photoluminescence (PL)emission from self-assembled InAs/InP(001) quantum dots (QDs). Upon annealing, the spectra reveal an atypical evolution, showing an increase in the emission bandwidth and the rise of a InAsP quantum-well-like peak. The overall emission exhibit a blueshift whose magnitude increases with annealing temperature and fluence up to ∼325 meV. The temperature threshold for a detectable PL shift, 400 ◦C, is considerably lower than the 725 ◦C value for unimplanted samples, thereby demonstrating the potential of ion-implantation-induced intermixing for spatially selective band gap tuning of InAs/InP QDs.

Item Type:Article
Subjects:Physical Science > Quantum phenomena
ID Code:199
Deposited By:Lesley Tobin
Deposited On:17 Nov 2008 15:19
Last Modified:30 Jan 2009 15:28

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