R.D., Tihonov (2006) A Dual-Collector Magnetotransistor: Negative Sensitivity, Absoluts Sensitivity and Noises. Journal of NANO and MICROSYSTEM TECHNIQUE, 11 (11). pp. 36-40.
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With the help of modem device-technological modeling the distributions of carriers of a charge, density of currents and recombination speed in two-collector lateral bipolar the magnetotransistor generated in a well at external connection of contacts to a substrate and to a well are investigated. The experimental research dual-collector lateral bipolar magnetotransistor with base in well, as sensor of weak magnetic fields is spent. The absolute sensitivity 900 V/T, voltage of noise in a working mode and resolution 510-10 T is determined.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:20|
|Last Modified:||20 Mar 2009 08:58|
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