Mustafaev, A.G. (2008) Influence of Total Ionizing Dose on Mosfets Fabricated by SOS Technology. Journal of NANO and MICROSYSTEM TECHNIQUE, 9 (9). pp. 44-46.
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MOSFETs are irradiated with a Co-60 gamma source up to 900 Gr(Si). An increase of leakage current is founded after irradiation in nMOS only at low total dose and in pMOS only at high dose. The increase in leakage current is appropriate to the trapped charge polarity change with the increase of total dose.
|Subjects:||Physical Science > Nanoelectronics|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||19 Dec 2008 13:19|
|Last Modified:||06 Feb 2009 14:58|
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