Nano Archive

Influence of Total Ionizing Dose on Mosfets Fabricated by SOS Technology

Mustafaev, A.G. (2008) Influence of Total Ionizing Dose on Mosfets Fabricated by SOS Technology. Journal of NANO and MICROSYSTEM TECHNIQUE, 9 (9). pp. 44-46.

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Official URL: http://www.microsystems.ru/

Abstract

MOSFETs are irradiated with a Co-60 gamma source up to 900 Gr(Si). An increase of leakage current is founded after irradiation in nMOS only at low total dose and in pMOS only at high dose. The increase in leakage current is appropriate to the trapped charge polarity change with the increase of total dose.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
ID Code:1955
Deposited By:Prof. Alexey Ivanov
Deposited On:19 Dec 2008 13:19
Last Modified:06 Feb 2009 14:58

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