Lee, K. H. and Brossard, F. S. F. and Hadjipanayi, M. and Xu, X. and Waldermann, F. and Green, A. M. and Sharp, D. N. and Turberfield, A. J. and Williams, D. A. and Taylor, R. A. (2008) Towards registered single quantum dot photonic devices. NANOTECHNOLOGY, 19 (45).
|PDF - Published Version|
Official URL: http://dx.doi.org/10.1088/0957-4484/19/45/455307
We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process.
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Quantum phenomena
Physical Science > Photonics
|Deposited By:||Farnush Anwar|
|Deposited On:||16 Dec 2008 16:01|
|Last Modified:||16 Dec 2008 16:01|
Repository Staff Only: item control page