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The synthesis of ZnO nanowires and their subsequent use in high-current field-effect transistors formed by dielectrophoresis alignment

Lee, Seung-Yong and Urnar, Ahmad and Suh, Duk-Il and Park, Ji-Eun and Hahn, Yoon-Bong and Ahn, Jeong-Yong and Lee, Sang-Kwon (2008) The synthesis of ZnO nanowires and their subsequent use in high-current field-effect transistors formed by dielectrophoresis alignment. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40 (4). pp. 866-872.

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Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...

Abstract

The synthesis of zinc oxide (ZnO) nanowires was achieved by thermal evaporation on a steel alloy substrate. Various material characteristics such as X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and Raman scattering analysis indicated that the synthesized ZnO nanowires were single crystalline with a wurtzite hexagonal phase, and were preferentially synthesized in the c-axis direction. In addition, the straightforward and successful alternating current (AC) dielectrophoresis (DEP) method that can be used to align and manipulate ZnO nanowires as well as to fabricate high-performance multiple-channel field-effect transistors (FETs) with a back-gate structure were also investigated. The DEP results indicated that the number of aligned ZnO nanowires increased with the increasing AC voltages. Moreover, we demonstrated that the DEP-prepared multiple ZnO nanowires FETs can manage on-current exceeding -similar to 1 mu A at a low-bias voltage. Our approach to build up the high-current nano-FETs offers substantial opportunities for further practical electronics and photonics device applications. (c) 2007 Elsevier B.V. All rights reserved.

Item Type:Article
Uncontrolled Keywords:dielectrophoresis; ZnO nanowires; field-effect transistors (FETs); electrostatic screening effect
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Nanoelectronics
ID Code:1884
Deposited By:Farnush Anwar
Deposited On:16 Dec 2008 15:32
Last Modified:16 Dec 2008 15:33

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