Snider, Gregory S and Williams, R Stanley (2007) Nano/CMOS architectures using a field-programmable nanowire interconnect. Nanotechnology, 18 (3). 035204-035215. ISSN 09574484
Official URL: http://dx.doi.org/10.1088/0957-4484/18/3/035204
A field-programmable nanowire interconnect (FPNI) enables a family of hybrid nano/CMOS circuit architectures that generalizes the CMOL (CMOS/molecular hybrid) approach proposed by Strukov and Likharev, allowing for simpler fabrication, more conservative process parameters, and greater flexibility in the choice of nanoscale devices. The FPNI improves on a field-programmable gate array (FPGA) architecture by lifting the configuration bit and associated components out of the semiconductor plane and replacing them in the interconnect with nonvolatile switches, which decreases both the area and power consumption of the circuit. This is an example of a more comprehensive strategy for improving the efficiency of existing semiconductor technology: placing a level of intelligence and configurability in the interconnect can have a profound effect on integrated circuit performance, and can be used to significantly extend Moore’s law without having to shrink the transistors. Compilation of standard benchmark circuits onto FPNI chip models shows reduced area (8× to 25×), reduced power, slightly lower clock speeds, and high defect tolerance—an FPNI chip with 20% defective junctions and 20% broken nanowires has an effective yield of 75% with no significant slowdown along the critical path, compared to a defect-free chip. Simulations show that the density and power improvements continue as both CMOS and nano fabrication parameters scale down, although the maximum clock rate decreases due to the high resistance of very small (<10 nm) metallic nanowires.
|Subjects:||Physical Science > Nanoelectronics|
|Deposited By:||Lesley Tobin|
|Deposited On:||13 Nov 2008 10:54|
|Last Modified:||27 Jan 2009 16:17|
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