Liang, Gengchiau and Neophytou, Neophytos and Nikonov, Dmitri E. and Lundstrom, Mark S. (2007) Performance projections for ballistic graphene nanoribbon field-effect transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 54 (4). pp. 677-682.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arn...
Abstract
The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. We calculate the bandstructure of nanoribbons using a single p(z)-orbital tight-binding method and evaluate the current-voltage characteristics of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting ribbons. a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. Our calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ballistic; bandstructure; carbon; current density; graphite; MOSFET; nanotechnology; nanowire; quantum confinement |
| Subjects: | Physical Science > Nanophysics Physical Science > Nanoelectronics |
| ID Code: | 1659 |
| Deposited By: | Mark Morrison |
| Deposited On: | 08 Jan 2009 12:37 |
| Last Modified: | 08 Jan 2009 12:37 |
Repository Staff Only: item control page
