Nano Archive

Performance projections for ballistic graphene nanoribbon field-effect transistors

Liang, Gengchiau and Neophytou, Neophytos and Nikonov, Dmitri E. and Lundstrom, Mark S. (2007) Performance projections for ballistic graphene nanoribbon field-effect transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 54 (4). pp. 677-682.

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Abstract

The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. We calculate the bandstructure of nanoribbons using a single p(z)-orbital tight-binding method and evaluate the current-voltage characteristics of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting ribbons. a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. Our calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications.

Item Type:Article
Uncontrolled Keywords:ballistic; bandstructure; carbon; current density; graphite; MOSFET; nanotechnology; nanowire; quantum confinement
Subjects:Physical Science > Nanophysics
Physical Science > Nanoelectronics
ID Code:1659
Deposited By:Mark Morrison
Deposited On:08 Jan 2009 12:37
Last Modified:08 Jan 2009 12:37

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