Kulkarni, G. U. (2008) Conductive atomic force microscopy of InAs/GaAs quantum rings. Applied Physics Letters, 92 (192105). ISSN 10.1063/1.2928220
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Official URL: http://link.aip.org/link/?APPLAB/92/192105/1
Abstract
The properties of self-assembled InAs/GaAs quantum rings are investigated by conductive atomic force microscopy. Our two-dimensional current maps and current-voltage curves show a lower conductivity of the central ring hole as compared to rim and surrounding planar region. This result is quite surprising if we take into account the compositional profile of quantum rings: being the region with the highest In concentration, one would expect the central hole to be the region with the highest conductivity. However, including the presence of a surface oxide into numerical simulations yields consistent results, which show the same qualitative behavior as the measured conductivities.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | atomic force microscopy, electrical conductivity, gallium arsenide, III-V semiconductors, indium compounds, self-assembly, semiconductor quantum wells, surface topography |
| Subjects: | Material Science > Tunnelling and microscopic phenomena Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 1604 |
| Deposited By: | JNCASR |
| Deposited On: | 03 Apr 2009 06:37 |
| Last Modified: | 12 Aug 2009 11:33 |
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