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Conductive atomic force microscopy of InAs/GaAs quantum rings

Kulkarni, G. U. (2008) Conductive atomic force microscopy of InAs/GaAs quantum rings. Applied Physics Letters, 92 (192105). ISSN 10.1063/1.2928220

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The properties of self-assembled InAs/GaAs quantum rings are investigated by conductive atomic force microscopy. Our two-dimensional current maps and current-voltage curves show a lower conductivity of the central ring hole as compared to rim and surrounding planar region. This result is quite surprising if we take into account the compositional profile of quantum rings: being the region with the highest In concentration, one would expect the central hole to be the region with the highest conductivity. However, including the presence of a surface oxide into numerical simulations yields consistent results, which show the same qualitative behavior as the measured conductivities.

Item Type:Article
Uncontrolled Keywords:atomic force microscopy, electrical conductivity, gallium arsenide, III-V semiconductors, indium compounds, self-assembly, semiconductor quantum wells, surface topography
Subjects:Material Science > Tunnelling and microscopic phenomena
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:1604
Deposited By:JNCASR
Deposited On:03 Apr 2009 06:37
Last Modified:12 Aug 2009 11:33

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