Krasil'nik, Z F and Lytvyn, P and Lobanov, D N and Mestres, N and Novikov, A V and Pascual, J and Valakh, M Ya and Yukhymchuk, V A (2002) Microscopic and optical investigation of Ge nanoislands on silicon substrates. Nanotechnology, 13 (1). pp. 81-85.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0957-4484/13/81
Abstract
We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.
| Item Type: | Article |
|---|---|
| ID Code: | 1596 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 11 Dec 2008 09:40 |
| Last Modified: | 11 Dec 2008 09:40 |
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