Vakulenko, O. V. and Kondratenko, S. V. and Nikolenko, A. S. and Golovinskiy, S. L. and Kozyrev, Yu. N. and Rubezhanska, M. Yu. and Vodyanitsky, A. I. (2007) Photoconductivity spectra of Ge/Si heterostructures with Ge QDs. Nanotechnology, 18 (18). 185401 (5pp).
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Official URL: http://stacks.iop.org/0957-4484/18/185401
Spectral dependences of lateral photoconductivity of Si1[?]xGex heterostructures with Ge nanoislands were investigated at 77 and 290~K. It is supposed that the photocurrent in the range 0.81-1.02~eV at 290~K is conditioned by a nonequilibrium carrier generated by interband transitions in Ge nanoislands. Si1[?]xGex heterostructures with Ge nanoislands showed lateral photocurrent in the range from 0.32 to 1.2~eV at 77~K. Such a photocurrent is explained by hole transitions from the localized states of light and heavy holes in Ge nanoislands into the delocalized states of the valence band. It was found that the valence bandgap offset of the heterojunction between the nanoislands and strained c-Si surrounding was 0.48~eV.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 09:45|
|Last Modified:||26 Mar 2009 14:41|
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