Nano Archive

Exciton states and photoluminescence in Ge quantum dots

Kaganovich, E B and Korbutyak, D V and Kryuchenko, Yu V and Kupchak, I M and Manoilov, E G and Sachenko, A V (2007) Exciton states and photoluminescence in Ge quantum dots. Nanotechnology, 18 (29). 295401 (5pp).

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://stacks.iop.org/0957-4484/18/295401

Abstract

We have studied, both theoretically and experimentally, the mechanism of photoluminescence (PL) of Ge nanocrystals in SiO2~and GeO2 matrices. Ge~quantum dots (QDs) have been created by pulsed laser deposition (PLD). Time-resolved PL spectra in the photon energy range of 1.4-~3.2~eV have been measured within the time range 50~ns-20~<span class='mathrm'>μ</span>s. We have calculated the exciton binding and radiative transition energies accounting for both finite potential barriers and heterointerface polarization in the system. PL spectra have been calculated and compared with experimental results accounting for quantum-mesoscopic fluctuations and possible oscillations in exciton radiative lifetime occurring as QD size decreases. Good agreement between calculated and experimental PL spectra supports an assumption on the excitonic character of PL in Ge QDs and enables the parameters of the PL~model to be determined.

Item Type:Article
ID Code:1585
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 09:45
Last Modified:20 Mar 2009 08:58

Repository Staff Only: item control page