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Tailoring the character of the band-gap in łangle 011<br />rangle -, łangle 111<br />rangle -~and łangle 112<br />rangle -oriented silicon nanowires

Migas, D. B. and Borisenko, V. E. (2007) Tailoring the character of the band-gap in łangle 011<br />rangle -, łangle 111<br />rangle -~and łangle 112<br />rangle -oriented silicon nanowires. Nanotechnology, 18 (37). 375703 (5pp).

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Official URL: http://stacks.iop.org/0957-4484/18/375703

Abstract

The nature of the band-gap in Si nanowires has been investigated by means of ab initio calculations. We show that łangle 011<br />rangle -oriented nanostructures display a direct transition, nanostructures with the łangle 111<br />rangle axis possess a competitive indirect-direct gap character, and nanostructures in the łangle 112<br />rangle orientation are found to have an indirect band-gap. Increasing the lattice parameter along the wire axis leads to the stabilization of the direct transition in the łangle 111<br />rangle -oriented Si nanowires, whereas uniaxial strain does not affect the character of the gap in nanostructures with łangle 011<br />rangle and łangle 112<br />rangle axes. Estimates of the dipole matrix elements in the case of the łangle 011<br />rangle -oriented Si nanowires indicate that their values depend on the surface reconstruction of the 001 facets similar to the nanostructures in the łangle 001<br />rangle orientation.

Item Type:Article
ID Code:1577
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:40
Last Modified:26 Mar 2009 11:58

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