In situ synthesis and characterization of GaN nanorods through thermal decomposition of pre-grown GaN films

Abstract

Herein we describe a thermal treatment route to synthesize gallium nitride (GaN) nanorods. In this method, GaN nanorods were synthesized by thermal treatment of GaN films at a temperature of 800 degrees C. The morphology and structure of GaN nanorods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results show that GaN nanorods have a hexagonal wurtzite structure with diameters ranging from 30 to 50 nm. Additionally, GaN nanoplates are also founded in the products. The growth process of GaN nanostructures was investigated and a thermal decomposition mechanism was proposed. Our method provides a cost-effective route to fabricate GaN nanorods, which will benefit the fabrication of one-dimensional nanomaterials and device applications.