Nano Archive

Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Liu, Boyang and Huang, Yingyan and Xu, Guoyang and Ho, Seng-Tiong (2008) Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors. NANOTECHNOLOGY, 19 (15).

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/19/15/155...

Abstract

A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate ( PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is similar to 160 mC cm(-2). The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Engineering > Nanotechnology applications in ICT
ID Code:1489
Deposited By:Farnush Anwar
Deposited On:11 Dec 2008 20:47
Last Modified:11 Dec 2008 20:47

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