Nano Archive

Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer

Cha, Seung Nam and Song, B. G. and Jang, J. E. and Jung, J. E. and Han, I. T. and Ha, J. H. and Hong, J. P. and Kang, D. J. and Kim, J. M. (2008) Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer. NANOTECHNOLOGY, 19 (23).

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/19/23/235...

Abstract

A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO2) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO2 coated Si substrate are realized from the appropriately thick oxidized Zn seed layer by a vapor-solid growth mechanism by catalyst-free thermal chemical vapor deposition (CVD). These experimental results raise the possibility of using the nanowires as functional blocks for high-density integration systems and/or photonic applications.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Technology > Manufacturing processes for nanotechnology
ID Code:1472
Deposited By:Farnush Anwar
Deposited On:15 Dec 2008 11:52
Last Modified:19 Feb 2009 09:00

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