Novotny, Clint J. and Yu, Edward T. and Yu, Paul K. L. (2008) InP nanowire/polymer hybrid photodiode. NANO LETTERS, 8 (3). pp. 775-779.
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Official URL: http://dx.doi.org/10.1021/nl072372c
A novel design is presented for a nanowire/polymer hybrid photodiode. n-InP nanowires are grown directly onto an indium tin oxide (ITO) electrode to increase carrier collection efficiency and to eliminate the need for an expensive substrate. Experiments show that an ohmic contact is achieved between the nanowires and the ITO electrode. The nanowires are then enveloped by a high hole mobility conjugated polymer, poly(3-hexylthiophene). Compared to the control polymer-only device, the inclusion of InP nanowires increases the forward bias current conduction by 6 - 7 orders of magnitude. A high rectification ratio of 155 is achieved in these photodiodes along with a low ideality factor of 1.31. The hybrid device produces a photoresponse with a fill factor of 0.44, thus showing promise as an alternative to current polymer solar cell designs.
|Subjects:||Physical Science > Nanophysics|
Material Science > Functional and hybrid materials
Material Science > Nanofabrication processes and tools
Material Science > Nanostructured materials
|Deposited By:||Anuj Seth|
|Deposited On:||15 Dec 2008 13:36|
|Last Modified:||19 Jan 2009 09:53|
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