Nano Archive

Nanoclustering in Silicon Induced by Oxygen Ions Implanted

Manno, Daniela and Serra, A. and Filippo, E. and Rossi, M. and Quarta, G. and Maruccio, L. and Calcagnile, L. (2011) Nanoclustering in Silicon Induced by Oxygen Ions Implanted. Nanomaterials and Nanotechnology, 1 (2). pp. 25-31. ISSN 1847-9804

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We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has been used.   The surface modifications and the structure of nanoclusters are investigated. The topographic images, obtained by scanning tunnelling microscope showed that the surface is covered with a dense array of tetragonal nanostructures oriented with respect to the substrate. Raman spectroscopy data allowed us to estimate an average cluster size of about 50 nm. Resistivity and Hall effect measurements evidenced that the electron transport in the implanted silicon samples is affected by the nanoclusters array and it could be explained by thermally activated hopping between localized states.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Material Science > Nanochemistry
Material Science > Nanostructured materials
ID Code:11901
Deposited By:Mr Sasa Marcan
Deposited On:14 Aug 2012 12:53
Last Modified:14 Aug 2012 12:53

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