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Regulation of defect creation in ZnO p-type films by RBQE method. Part 2.

Butkhuzi, T. and Sharvashidze, T. and Khulordava, M. and Gapishvili, N. and Kekelidze, E. and Bukhsianidze, N. and Aptsiauri, L. and Trapaidze, L. and Melkadze, R. and Kamkamidze, I. and Gapishvili, L. (2011) Regulation of defect creation in ZnO p-type films by RBQE method. Part 2. Nano Studies, 3 . pp. 151-156. ISSN 1987-8826

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In order to obtain impurity p-type conductivity in ZnO nano-films we carried out following experiment: n-type ZnO was implanted with F^+ ions at the concentration 10^20 cm^–3 at the energy E = 110 keV and at the dose D = 10^16 cm^–2. Healing of the created defects in the implanted ZnO crystals were carried out by radical-beam-quasi-epitaxy (RBQE) method. According to the measurements with van der Pauw method the hole mobility, hole concentration and resistivity were found as 270 cm^2 / V s, 1.0*10^19 cm^–3 and 2.3*10^–3 Ohm cm, respectively. In photo-luminescence (PL) spectrum (recorded at T = 70 K) of p-type ZnO:F layers maxima at λ = 369.1, 374.5, 382.4, 389.9 and 401.0 nm were observed. Here we demonstrate the ability of the RBQE technology for control of electrical and optical properties of ZnO material.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11772
Deposited By:Professor Levan Chkhartishvili
Deposited On:22 Jan 2012 17:01
Last Modified:22 Jan 2012 17:01

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