Nano Archive

Regulation of defect creation in ZnO p-type films by RBQE method. Part 1.

Butkhuzi, T. and Sharvashidze, M. and Khulordava, T. and Kekelidze, E. and Gapishvili, N. and Aptsiauri, L. and Bukhsianidze, N. and Trapaidze, L. and Melkadze, R. and Gapishvili, L. and Tigishvili, M. and Mirianashvili, Sh. and Qamushadze, T. (2010) Regulation of defect creation in ZnO p-type films by RBQE method. Part 1. Nano Studies, 1 . pp. 11-18. ISSN 1987-8826

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Abstract

We have investigated ZnO layers obtained by the radical beam quasi-epitaxy (RBQE) method. By the RBQE technological method p-type ZnO epitaxial layers were obtained at T = 400^oC. Hall measurements performed at T = 77 and 300 K. Resistivity was measured as 5*10^–2 and 3.1*10^–3 Ω*cm at 77 and 300 K, respectively. At 77 K, the holes concentration and mobility was 5*10^18 cm^–3 and 22 cm^2/V*s becoming 8*10^18 cm^–3 and 250 cm^2/V*s at 300 K. In the photoluminescence (PL) spectrum of p-type ZnO layers at λ = 392.1, 374.5, 383.5, 392.5 and 401 nm, bands are observed and identified (at 70 K). Here we show that the RBQE technology gives to control electrical and optical properties of ZnO samples.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11769
Deposited By:Professor Levan Chkhartishvili
Deposited On:21 Jan 2012 09:04
Last Modified:21 Jan 2012 09:04

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