Nano Archive

Nonequlibrium treatment of ZnO layers implanted by N

Butkhuzi, T. and Sharvashidze, M. and Khulordava, T. and Kekelidze, E. and Gapishvili, N. and Aptsiauri, L. and Bukhsianidze, N. and Trapaidze, L. and Melkadze, R. and Mirianashvili, Sh. and Qamushadze, T. and Gapishvili, L. and Tigishvili, M. (2010) Nonequlibrium treatment of ZnO layers implanted by N. Nano Studies, 1 . pp. 5-9. ISSN 1987-8826

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In order to obtain the p-type impurity conduction, ZnO layers were implanted by N^+ ions with concentration 10^19 cm^–3 at energy 110 keV, implantation dose 10^15 cm^–2, and current density 15 mA / cm^2. Healing of the radiation defects created in implanted ZnO crystals was carried out by radical beam quasi-epitaxy (RBQE) in the atmosphere of active oxygen radicals (T = 400 ^oC, t = 4 h, n_0 = (10^14 – 5*10^15) cm^–3). As a result we obtained ZnO:N epitaxial layers. According to the measurements with van der Pauw method the holes mobility, their concentration, and layers’ resistivity were found as 23 cm^2/V*s, 5*10^16 cm^–3 and 5.4 Ω*cm, respectively. In photoluminescence (PL) spectra of ZnO:N, the maxima were observed at λ = 371.5, 381.2 and 387.4 nm. Analysis shows that 371.5 nm links to acceptor-bound exciton (A^oX) related to the nitrogen acceptor, 381.2 and 387.4 nm link to N_O and donor–acceptor pear (DAP) emissions, respectively.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11768
Deposited By:Professor Levan Chkhartishvili
Deposited On:21 Jan 2012 08:55
Last Modified:21 Jan 2012 08:55

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