Kazarov, R. E. and Chikovani, R. I. and Garibashvili, D. I. and Goderdzishvili, G. I. and Khachidze, T. I. (2010) On elaboration of optoelectronic elements exploiting properties of nanosilicon formed in "silicon-on-sapphire" -structure [in Russian]. Nano Studies, 2 . pp. 119-121. ISSN 1987-8826
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Abstract
Article is devoted to very interesting and perspective issue-formation of solid-state optoelectronic elements based on light-emitting nanostructural silicon and heteroepitaxial structure “silicon-on-sapphire”. There posed main technological problems, which should be solved for making various optoelectronic elements.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanoelectronics Technology > Manufacturing processes for nanotechnology |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 11761 |
| Deposited By: | Professor Levan Chkhartishvili |
| Deposited On: | 20 Jan 2012 18:10 |
| Last Modified: | 20 Jan 2012 18:10 |
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