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On elaboration of optoelectronic elements exploiting properties of nanosilicon formed in "silicon-on-sapphire" -structure [in Russian]

Kazarov, R. E. and Chikovani, R. I. and Garibashvili, D. I. and Goderdzishvili, G. I. and Khachidze, T. I. (2010) On elaboration of optoelectronic elements exploiting properties of nanosilicon formed in "silicon-on-sapphire" -structure [in Russian]. Nano Studies, 2 . pp. 119-121. ISSN 1987-8826

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Abstract

Article is devoted to very interesting and perspective issue-formation of solid-state optoelectronic elements based on light-emitting nanostructural silicon and heteroepitaxial structure “silicon-on-sapphire”. There posed main technological problems, which should be solved for making various optoelectronic elements.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Technology > Manufacturing processes for nanotechnology
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11761
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 18:10
Last Modified:20 Jan 2012 18:10

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