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About nature of deformation pressure in germanium thin layers implanted by B^+ ions

Dolidze, N. D. and Jibuti, Z. V. and Narsia, G. S. and Eristavi, G. L. (2010) About nature of deformation pressure in germanium thin layers implanted by B^+ ions. Nano Studies, 1 . pp. 167-171. ISSN 1987-8826

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Abstract

In this paper the effect of ion implantation on the exciton absorption in n-Ge thin layers was studied. It is shown that the observed decrease in the absorption coefficient, broadening of the exciton peak, and its shift toward higher energies are caused by the electric and compression fields generated by the radiation-induced defects.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11748
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 17:09
Last Modified:20 Jan 2012 17:09

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