Nano Archive

To the non-thermal mechanism of melting of thin layers of semiconductors

Dolidze, N. D. and Jibuti, Z. V. and Tsekvava, B. E. (2010) To the non-thermal mechanism of melting of thin layers of semiconductors. Nano Studies, 1 . pp. 161-165. ISSN 1987-8826

[img]
Preview
PDF - Published Version
85Kb

Official URL: http://www.tech.caucasus.net

Abstract

This paper presents a theoretical model of low temperature melting of a crystal at pulse laser annealing as the electronic mechanism of attenuation and isotropization of chemical bonds between its atoms. The formula is derived for critical concentration of anti-bonding quasi-particles – electrons in the conduction band and holes in the valence band, under the increase of which a low temperature melting of the semiconductor on the electronic mechanism must be occurred.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11747
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 17:05
Last Modified:20 Jan 2012 17:05

Repository Staff Only: item control page