Dolidze, N. D. and Jibuti, Z. V. and Tsekvava, B. E. (2010) To the non-thermal mechanism of melting of thin layers of semiconductors. Nano Studies, 1 . pp. 161-165. ISSN 1987-8826
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Official URL: http://www.tech.caucasus.net
Abstract
This paper presents a theoretical model of low temperature melting of a crystal at pulse laser annealing as the electronic mechanism of attenuation and isotropization of chemical bonds between its atoms. The formula is derived for critical concentration of anti-bonding quasi-particles – electrons in the conduction band and holes in the valence band, under the increase of which a low temperature melting of the semiconductor on the electronic mechanism must be occurred.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 11747 |
| Deposited By: | Professor Levan Chkhartishvili |
| Deposited On: | 20 Jan 2012 17:05 |
| Last Modified: | 20 Jan 2012 17:05 |
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