Nano Archive

Scattering of electrons in n-Si crystals irradiated with protons by nanoscale inclusions

Pagava, T. A. and Maisuradze, N. I. (2010) Scattering of electrons in n-Si crystals irradiated with protons by nanoscale inclusions. Nano Studies, 1 . pp. 97-102. ISSN 1987-8826

[img]
Preview
PDF - Published Version
86Kb

Official URL: http://www.tech.caucasus.net

Abstract

The aim of this study was to gain insight into the effect of irradiation with 25 MeV protons on the Hall mobility of electrons in n-Si crystals. Irradiated crystals with an initial electron concentration 6*10^13 cm^–3 were studied using the Hall method in the range of temperatures (77 – 300) K. The studies showed that, in crystals irradiated with the proton dose Φ = 8.1*10^12 cm^–2, the effective mobility of conduction electrons μ_eff increases drastically. This effect is direct evidence that nanoscale inclusions with relatively high conductivity and with nonrectifying junction at interfaces with semiconductor matrix are predominantly formed in n-Si crystals under these conditions. Agglomerations of interstitial atoms or their associations can represent such nanoscale inclusions.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11742
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 16:39
Last Modified:20 Jan 2012 16:39

Repository Staff Only: item control page