Scattering of electrons in n-Si crystals irradiated with protons by nanoscale inclusions

Abstract

The aim of this study was to gain insight into the effect of irradiation with 25 MeV protons on the Hall mobility of electrons in n-Si crystals. Irradiated crystals with an initial electron concentration 6*10^13 cm^–3 were studied using the Hall method in the range of temperatures (77 – 300) K. The studies showed that, in crystals irradiated with the proton dose Φ = 8.1*10^12 cm^–2, the effective mobility of conduction electrons μ_eff increases drastically. This effect is direct evidence that nanoscale inclusions with relatively high conductivity and with nonrectifying junction at interfaces with semiconductor matrix are predominantly formed in n-Si crystals under these conditions. Agglomerations of interstitial atoms or their associations can represent such nanoscale inclusions.