Jabua, Z. U. and Kupreishvili, I. L. and Gigineishvili, A. V. and Bzhalava, T. L. (2010) Preparation of Ho_5Sb_3 thin films and their electro-physical properties. Nano Studies, 1 . pp. 43-46. ISSN 1987-8826
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Abstract
The technology for preparation of Ho_5Sb_3 thin films was developed. The samples were prepared by vacuum thermal evaporation from two independent sources of Ho and Sb. Films had a hexagonal lattice with parameters a = 8.85 and c = 6.24 Å. Temperature dependence of the specific resistivity, Hall constant and thermo-EMF coefficient of these samples were measured in the temperature interval from 100 to 700 K. Based on these measurements the basic electro-physical parameters carriers mobility and concentration were determined in the one-band approximation. Obtained results reveal that Nd_5Sb_3 is a semi-metallic compound.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 11740 |
| Deposited By: | Professor Levan Chkhartishvili |
| Deposited On: | 20 Jan 2012 16:17 |
| Last Modified: | 20 Jan 2012 16:17 |
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