Nano Archive

Investigation of ZnS and ZnO compounds implanted by S ions

Butkhuzi, T. and Sharvashidze, M. and Khulordava, T. and Gapishvili, N. and Kekelidze, E. and Gelovani, Kh. and Aptsiauri, L. and Bukhsianidze, N. and Mirianashvili, Sh. and Qamushadze, T. and Trapaidze, L. and Melkadze, R. and Gapishvili, L. and Tigishvili, M. (2010) Investigation of ZnS and ZnO compounds implanted by S ions. Nano Studies, 1 . pp. 35-41. ISSN 1987-8826

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Abstract

The obtaining of p-type conductivity in ZnS and ZnO semiconductors depends on the critical temperature T_c. By treatment above this temperature it is impossible to obtain p-type conductivity. The doping of ZnS and ZnO samples was carried out with S^+ ions. Unfortunately, the temperature of annealing the radiation defects exceeds T_c, due to which the effect cannot be obtained (in ZnO). In our experiment we took into account factor of T_c. Both Ar^+ inert gas and S^+ ions were implanted in ZnS and ZnO n-type samples (ρ = (10^2 –10^3) Ω*cm) at energy 150 keV and dose of implantation from 10^14 to 10^16 cm^–2. The range of current density was from 0.3 to 5 mA/cm^2. The subsequent heat treatment of doped samples was carried out over the temperature range from 300 to 500^oC in vacuum and saturated S_2 vapor. The p-type ZnS samples were obtained by implantation of Ar^+ and S^+ ions (current density (0.3 – 5) mA/cm^2) under subsequent heat treatment at (420 – 460)^oC in S_2 saturated vapor. When ZnO was implanted with Ar^+ and S^+ ions (with heat treatment in O_2 atmosphere at temperature from 300 to 350^oC) n-type samples were obtained with resistivity (10^9 – 10^10) and (10^10 – 10^11) Ω*cm, respectively.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11739
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 16:12
Last Modified:20 Jan 2012 16:12

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