Nano Archive

Originality of technological processes of RBQE method

Butkhuzi, T. and Khulordava, T. and Sharvashidze, M. and Kekelidze, E. and Gapishvili, N. and Trapaidze, L. and Aptsiauri, L. (2010) Originality of technological processes of RBQE method. Nano Studies, 1 . pp. 19-25. ISSN 1987-8826

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Abstract

Original method, which enable us to create new quasiepitaxial layers on the surface of binary compound like that on the basic crystal have been elaborated. This method was called radical beam quasi-epitaxy (RBQE). In our case RBQE method enables us to obtain single crystalline layers of ZnO on the basic crystal of ZnSe. But generally it might be use for other binary compounds. For the confirmation of mechanism of defects creation under RBQE we carried out following experiment. We have obtained new layers of ZnO on the ZnSe basic crystal preliminary implanted by oxygen under RBQE (T = (300 – 800)^oC). Then, we studied electrical and optical properties of new quasiepitaxial ZnO layers and of ZnSe basic crystals. New quasiepitaxial layers of ZnO are characterized by n-type, stoichiometric, or p-type conductivity, which depends on the treatment’s temperature. According to thermo-EMF measurements of ZnSe basic crystal, pre-surface layers always have p-type conductivity after RBQE treatment. In the PL spectra of implanted and nonimplanted ZnSe basic crystals it was observed identical bands, with one difference: in the PL spectrum of implanted ZnSe additionally λ = 580 nm bands were observed, which must be connected to the existence of oxygen in the ZnSe.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11737
Deposited By:Professor Levan Chkhartishvili
Deposited On:20 Jan 2012 15:54
Last Modified:20 Jan 2012 15:54

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