Growth of germanium nitride nanowires

Abstract

The purpose of this work was to study the growth of germanium nitride nanowires at relatively low (500 – 580 ^oC) temperatures. The decrease in the synthesis temperature was caused by the application of active (N_2H_4) vapor. The hydrazine was containing 3 mol. % of water molecules. It was established that at 480 ^oC, due to the high reactivity of water the ball-shaped GeO_x clusters were formed on the Ge source surface. Beginning from 500 ^oC the nitriding ability of hydrazine decomposition products prevailed over the water induced effects and Ge_3N_4 nanowires started to grow on the surface of GeO_x clusters. They grow from the Ge-enriched nanodroplets through the vapor–liquid–solid mechanism. At Temperatures exceeding 530 ^oC the growth mechanism was changed to the vapor–solid method and Ge_3N_4 nanobelts were formed. All grown 1D nanostructures exhibited the α-Ge_3N_4 structure. It was found that the nucleation proceeds with the formation of both α and β-Ge_3N_4 nuclei. However, only α-Ge_3N_4 grows in the form of one-dimensional nanostructure.