Nano Archive

Growth of germanium nitride nanowires

Jishiashvili, D. and Shiolashvili, Z. and Makhatadze, N. and Kiria, L. and Jishiashvili, A. and Gobronidze, V. (2011) Growth of germanium nitride nanowires. Nano Studies, 4 . pp. 133-138. ISSN 1987-8826

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The purpose of this work was to study the growth of germanium nitride nanowires at relatively low (500 – 580 ^oC) temperatures. The decrease in the synthesis temperature was caused by the application of active (N_2H_4) vapor. The hydrazine was containing 3 mol. % of water molecules. It was established that at 480 ^oC, due to the high reactivity of water the ball-shaped GeO_x clusters were formed on the Ge source surface. Beginning from 500 ^oC the nitriding ability of hydrazine decomposition products prevailed over the water induced effects and Ge_3N_4 nanowires started to grow on the surface of GeO_x clusters. They grow from the Ge-enriched nanodroplets through the vapor–liquid–solid mechanism. At Temperatures exceeding 530 ^oC the growth mechanism was changed to the vapor–solid method and Ge_3N_4 nanobelts were formed. All grown 1D nanostructures exhibited the α-Ge_3N_4 structure. It was found that the nucleation proceeds with the formation of both α and β-Ge_3N_4 nuclei. However, only α-Ge_3N_4 grows in the form of one-dimensional nanostructure.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11674
Deposited By:Professor Levan Chkhartishvili
Deposited On:05 Jan 2012 21:20
Last Modified:05 Jan 2012 21:20

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