Current carriers scattering in semiconductors with inhomogeneities of various types

Abstract

The current carriers scattering on the different types of inhomogeneities in semiconductors have been analyzed using electrical measurements data. The types of disordered regions were of technological origin, connected with random space fluctuations of the composition, represented by grain boundaries, structure defects and barriers at the crystalline boundaries in semiconductors. Model of inhomogeneities describing disordered regions were applied for explanation of results and found to be in fair agreement with experimental data. In semiconductors, comparison of experimental data with theoretical computations displays additional to lattice and impurity-ions scattering of current carriers one due to the disordered regions of nanometer size. There should be taken into account that the contribution of disorder scattering depends on the temperature range and impurity doping level.