Nano Archive

Single-electron nanosystems [in Georgian]

Bibilashvili, A. P. (2011) Single-electron nanosystems [in Georgian]. Nano Studies, 3 . pp. 205-216. ISSN 1987-8826

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Abstract

The conditions and physical features of tunneling of charge carriers and a single-electron through a potential barrier are considered. The equivalent schemes, characteristics and parameters of the tunneling electron in the case of single- and double-barrier structures are considered as well. A physical principle of single-electronic transistor, its main settings and some recent developments in this direction are presented.

Item Type:Article
Subjects:Physical Science > Quantum phenomena
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11636
Deposited By:Professor Levan Chkhartishvili
Deposited On:05 Jan 2012 10:39
Last Modified:05 Jan 2012 10:39

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