Gogua, Z. and Gigineishvili, A. and Kantidze, G. and Iluridze, G. and Rtveliashvili, G. (2011) Dependence of energy-gap width on presence of shallow impurities in semiconductors with tetrahedral symmetry. Nano Studies, 3 . pp. 183-186. ISSN 1987-8826
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Abstract
According to the common model of the impurity center, the semiconductor energy-gap width dependence on the concentration of impurities is calculated. It is revealed a special role of impurities in decreasing the energy-gap width value. There is found a good agreement between results of calculations and available experimental data.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 11633 |
| Deposited By: | Professor Levan Chkhartishvili |
| Deposited On: | 05 Jan 2012 10:25 |
| Last Modified: | 05 Jan 2012 10:25 |
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