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Dependence of energy-gap width on presence of shallow impurities in semiconductors with tetrahedral symmetry

Gogua, Z. and Gigineishvili, A. and Kantidze, G. and Iluridze, G. and Rtveliashvili, G. (2011) Dependence of energy-gap width on presence of shallow impurities in semiconductors with tetrahedral symmetry. Nano Studies, 3 . pp. 183-186. ISSN 1987-8826

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Abstract

According to the common model of the impurity center, the semiconductor energy-gap width dependence on the concentration of impurities is calculated. It is revealed a special role of impurities in decreasing the energy-gap width value. There is found a good agreement between results of calculations and available experimental data.

Item Type:Article
Subjects:Physical Science > Nanophysics
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11633
Deposited By:Professor Levan Chkhartishvili
Deposited On:05 Jan 2012 10:25
Last Modified:05 Jan 2012 10:25

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